Samsung is producing more efficient 2nd gen DDR4 DRAM – 3,600Mbps Speeds Per Pin Reported

Samsung has begun producing second-generation of its 10-nanometer 8GB DDR4 DRAM at the mass production level. The company is boasting that this new chip will feature the highest performance and will be much more energy efficient compared to other DRAM chips. Samsung also said that this chip would have smallest dimensions which will provide more space for other components.

Samsung Aiming for DDR5 and LPDDR5 Memory Solutions Based on the 10nm Process – No EUV Process Was Used to Help With Company’s Achievements

Gyoyoung Jin, president of Memory Business at Samsung Electronics, said:

“By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability. Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10-nm DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.”

The new chip will offer better energy efficiency and performance compared to first generation chip. The chip is claimed to be improved by 15 percent in regards to energy efficiency – that will help laptops to stay on a bit longer. Speaking of performance, Samsung mentioned the new chip will be improved by 10 percent and will offer 3,600Mbps per pin compared to first-gen’s 3,200Mbps.

Further, the firm will rapidly increase the production of the chip, but will also continue to manufacture the first generation chip to meet the demand for the DRAM in systems worldwide.

 

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b4c58c5edf797ff99fcca559f7ac9651?s=96&r=g - Samsung is producing more efficient 2nd gen DDR4 DRAM - 3,600Mbps Speeds Per Pin Reported
Muhammad Irfan Raza
Irfan Raza is Editor at TechWafer covering Everything about Apple including Mac, iPhones, iMac, iMac Pro, MacBook, and How-tos.

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